Compressive properties and microstructure evolution of sintered nano-silver

Abstract In this work, the compressive properties of sintered nano-silver applied to third generation semiconductor at room temperature are tested a loading rate 10 -2 s -1 . The stress-strain curve shows obvious elastic and plastic stage, with failure pore wall sintering neck, damage accumulates gradually until failure. microstructure is analyzed statistically by scanning electron microscope. A finite element model for porous structure developed matching microscope analysis. modulus neck obtained combining macro experimental data Ashby model. local process simulated numerically. It noted that path determined large spacing.